Characterization of polymeric light emitting diodes by SIMS depth profiling analysis
Identifieur interne : 000130 ( Main/Exploration ); précédent : 000129; suivant : 000131Characterization of polymeric light emitting diodes by SIMS depth profiling analysis
Auteurs : RBID : ISTEX:216_1995_Article_BF00321341.pdfAbstract
SIMS depth profiling experiments have been used to elucidate the layered structure, the impurity distribution, and current induced changes in polymeric light emitting diodes (LEDs). In the first investigated system (ITO/PPV/Al), a poly-p-phenylene-vinylene (PPV) layer has been deposited onto an indium/tin oxide (ITO) glass support, and covered by an aluminium top electrode. A well defined aluminium oxide interlayer has been found in between the polymer and the Al overlayer. Furthermore, an enrichment of chlorine has been detected at both electrode-polymer interfaces, a residue from the polymer preparation process. This observation points to a chemical reaction between the electrodes and elimination products that are liberated during the thermal decomposition of the polymer precursor. In the second system, three different polymeric layers have been spin-coated onto an ITO substrate, i.e. a pure poly-methylphenylsilane (PMPS) layer, a second PMPS layer doped with an organic dye, and finally a polystyrene (PS) layer containing an oxadiazole derivative. By the addition of a bromine containing label into the first layer, it can be shown that the two PMPS layers have been diffusing into each other, whereas the PMPS and the PS regions have remained well separated. As found with the single layer devices, the formation of an interfacial oxide layer between the PS layer and the Al top electrode has been observed. Investigations of driven multilayer LEDs have provided evidence for drastic current-induced degradation effects.
DOI: 10.1007/BF00321341
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Characterization of polymeric light emitting diodes by SIMS depth profiling analysis</title><author><name>G. Sauer</name><affiliation wicri:level="1"><mods:affiliation>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>M. Kilo</name><affiliation wicri:level="1"><mods:affiliation>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>M. Hund</name><affiliation wicri:level="1"><mods:affiliation>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>A. Wokaun</name><affiliation wicri:level="1"><mods:affiliation>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>S. Karg</name><affiliation wicri:level="1"><mods:affiliation>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>M. Meier</name><affiliation wicri:level="1"><mods:affiliation>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>W. Rieß</name><affiliation wicri:level="1"><mods:affiliation>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>M. Schwoerer</name><affiliation wicri:level="1"><mods:affiliation>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>H. Suzuki</name><affiliation wicri:level="1"><mods:affiliation>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>J. Simmerer</name><affiliation wicri:level="1"><mods:affiliation>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>H. Meyer</name><affiliation wicri:level="1"><mods:affiliation>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author><author><name>D. Haarer</name><affiliation wicri:level="1"><mods:affiliation>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth</wicri:regionArea><wicri:noRegion>95440, Bayreuth</wicri:noRegion><wicri:noRegion>Bayreuth</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:216_1995_Article_BF00321341.pdf</idno><date when="1995">1995</date><idno type="doi">10.1007/BF00321341</idno><idno type="wicri:Area/Main/Corpus">000277</idno><idno type="wicri:Area/Main/Curation">000277</idno><idno type="wicri:Area/Main/Exploration">000130</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">SIMS depth profiling experiments have been used to elucidate the layered structure, the impurity distribution, and current induced changes in polymeric light emitting diodes (LEDs). In the first investigated system (ITO/PPV/Al), a poly-p-phenylene-vinylene (PPV) layer has been deposited onto an indium/tin oxide (ITO) glass support, and covered by an aluminium top electrode. A well defined aluminium oxide interlayer has been found in between the polymer and the Al overlayer. Furthermore, an enrichment of chlorine has been detected at both electrode-polymer interfaces, a residue from the polymer preparation process. This observation points to a chemical reaction between the electrodes and elimination products that are liberated during the thermal decomposition of the polymer precursor. In the second system, three different polymeric layers have been spin-coated onto an ITO substrate, i.e. a pure poly-methylphenylsilane (PMPS) layer, a second PMPS layer doped with an organic dye, and finally a polystyrene (PS) layer containing an oxadiazole derivative. By the addition of a bromine containing label into the first layer, it can be shown that the two PMPS layers have been diffusing into each other, whereas the PMPS and the PS regions have remained well separated. As found with the single layer devices, the formation of an interfacial oxide layer between the PS layer and the Al top electrode has been observed. Investigations of driven multilayer LEDs have provided evidence for drastic current-induced degradation effects.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="2fe301862bc35d0473a1bd7e7172eadeb6e9d2e0"><titleInfo lang="eng"><title>Characterization of polymeric light emitting diodes by SIMS depth profiling analysis</title></titleInfo><name type="personal"><namePart type="given">G.</namePart><namePart type="family">Sauer</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Kilo</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Hund</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Wokaun</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalische Chemie II, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Karg</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Meier</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">W.</namePart><namePart type="family">Rieß</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Schwoerer</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Experimentalphysik II und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Suzuki</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Simmerer</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Meyer</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><name type="personal"><namePart type="given">D.</namePart><namePart type="family">Haarer</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Experimentalphysik IV und BIMF, Universität Bayreuth, D-95440, Bayreuth, Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Poster Sessions</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1995-04-03</dateCreated><dateCaptured encoding="w3cdtf">1995-04-06</dateCaptured><dateValid encoding="w3cdtf">2004-08-26</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">SIMS depth profiling experiments have been used to elucidate the layered structure, the impurity distribution, and current induced changes in polymeric light emitting diodes (LEDs). In the first investigated system (ITO/PPV/Al), a poly-p-phenylene-vinylene (PPV) layer has been deposited onto an indium/tin oxide (ITO) glass support, and covered by an aluminium top electrode. A well defined aluminium oxide interlayer has been found in between the polymer and the Al overlayer. Furthermore, an enrichment of chlorine has been detected at both electrode-polymer interfaces, a residue from the polymer preparation process. This observation points to a chemical reaction between the electrodes and elimination products that are liberated during the thermal decomposition of the polymer precursor. In the second system, three different polymeric layers have been spin-coated onto an ITO substrate, i.e. a pure poly-methylphenylsilane (PMPS) layer, a second PMPS layer doped with an organic dye, and finally a polystyrene (PS) layer containing an oxadiazole derivative. By the addition of a bromine containing label into the first layer, it can be shown that the two PMPS layers have been diffusing into each other, whereas the PMPS and the PS regions have remained well separated. As found with the single layer devices, the formation of an interfacial oxide layer between the PS layer and the Al top electrode has been observed. Investigations of driven multilayer LEDs have provided evidence for drastic current-induced degradation effects.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Fresenius J Anal Chem</title></titleInfo><titleInfo><title>Fresenius' Journal of Analytical Chemistry</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 353</partNumber><partNumber>Number: 5-8</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-01-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Analytical Chemistry</topic><topic>Food Science</topic><topic>Inorganic Chemistry</topic><topic>Physical Chemistry</topic><topic>Monitoring/Environmental Analysis/Environmental Ecotoxicology</topic></subject><identifier type="issn">0937-0633</identifier><identifier type="issn">Electronic: 1432-1130</identifier><identifier type="matrixNumber">216</identifier><identifier type="local">IssueArticleCount: 64</identifier><recordInfo><recordOrigin>Springer-Verlag, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00321341</identifier><identifier type="matrixNumber">Art34</identifier><identifier type="local">BF00321341</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>642</start><end>646</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1995</recordOrigin><recordIdentifier>216_1995_Article_BF00321341.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000130 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000130 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:216_1995_Article_BF00321341.pdf
|texte= Characterization of polymeric light emitting diodes by SIMS depth profiling analysis
}}
| This area was generated with Dilib version V0.5.81. |  |